Yangtze Memory klettert auf Platz 3 des weltweiten NAND-Flash-Marktes

Counterpoint Research Q2 2026 storage‑market report shows Yangtze Memory achieved 14% global NAND flash bit‑shipment share, ranking third worldwide, only behind Samsung and SK Hynix.

Domestic storage giant’s IPO counseling status changed to counseling acceptance in mid‑August 2026. With continuous capacity ramp‑up of Fab3 production base, market researchers expect its global share will keep climbing in 2027.

AI‑driven storage consumption brings long‑term growth space for NAND chips. Massive data storage requirement from large AI models keeps pushing demand for high‑density flash memory. Industry institutions forecast NAND market will stay prosperous until 2028, when price pressure may gradually appear. Global buyers pay more attention to multi‑source procurement strategies for flash‑storage components.

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Ältere Superzyklus bei Speicherchips: Samsung und SK Hynix erhöhen ihre Investitionsausgaben deutlich

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Superzyklus bei Speicherchips: Samsung und SK Hynix erhöhen ihre Investitionsausgaben deutlich

According to latest industry statistics released August 2026, Samsung Electronics and SK Hynix raised semiconductor investment heavily during first half of this year. Combined capital expenditure hit 43.2 trillion KRW, growing 35.1% compared with last year Both vendors run memory fabs at nearly 100% capacity utilization rate.

Driven by AI large‑model servers, HBM and high‑capacity NAND flash keep strong market demand. Memory chips enter quantity‑and‑price‑rising super cycle. Market analysts point out memory semiconductor gradually transforms from traditional cyclical product to AI infrastructure component.

Supply side: New‑generation 1D DRAM and 400+‑layer V‑NAND development move forward. Samsung targets to finish 1D‑generation DRAM development in September 2026. Trial shipments of SK Hynix 375‑layer 4D NAND will start for major cloud customers this August. Buyers need to watch lead‑time changes for high‑bandwidth memory components.