Spezifikationen
Hersteller: STMicroelectronics
Device Type: N-channel high voltage power MOSFET, MDmesh K5 series, surface mount package
Wichtige elektrische Parameter
- Drain-source breakdown voltage: 950 V
- Continuous drain current (25℃): 9 A
- Max on-resistance: 1.25 Ω (Vgs=10V, Id=3A)
- Typical gate charge: 9.6 nC
- Max power dissipation: 90 W
- Gate voltage range: ±30 V
- Operating junction temperature: -55 ℃ ~ 150 ℃
- Package: DPAK (TO-252) surface mount package
Hauptmerkmale
Adopts MDmesh K5 advanced super junction process
Balanced conduction loss and switching loss, low gate charge
Excellent figure of merit for high frequency power conversion
100% avalanche energy tested for robust reliability
Built-in gate Zener protection diode
Low parasitic capacitance for fast switching performance
Typische Anwendungen
High voltage flyback switching power supplies
Industrial auxiliary power modules
LED high-power drive power supplies
Small household inverter equipment
AC-DC switching adapters, low power PFC circuits
