Технические характеристики
Производитель: STMicroelectronics
Device Type: N-channel high voltage power MOSFET, MDmesh K5 series, surface mount package
Core Electrical Parameters
- Drain-source breakdown voltage: 950 V
- Continuous drain current (25℃): 9 A
- Max on-resistance: 1.25 Ω (Vgs=10V, Id=3A)
- Typical gate charge: 9.6 nC
- Max power dissipation: 90 W
- Gate voltage range: ±30 V
- Operating junction temperature: -55 ℃ ~ 150 ℃
- Package: DPAK (TO-252) surface mount package
Main Features
Adopts MDmesh K5 advanced super junction process
Balanced conduction loss and switching loss, low gate charge
Excellent figure of merit for high frequency power conversion
100% avalanche energy tested for robust reliability
Built-in gate Zener protection diode
Low parasitic capacitance for fast switching performance
Типовые применения
High voltage flyback switching power supplies
Industrial auxiliary power modules
LED high-power drive power supplies
Small household inverter equipment
AC-DC switching adapters, low power PFC circuits
