FM25V10-G-TR

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    Spezifikationen

    FM25V10-G-TR is Infineon industrial-grade 1Mbit SPI Ferroelectric RAM (FRAM), a high-endurance nonvolatile memory that directly replaces SPI Flash and EEPROM, designed for embedded systems requiring ultra-frequent real-time data logging, crash-safe parameter storage and long-term data retention without refresh cycles.
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    FM25V10-G SOIC-8 Package
    👉 It is not slow-write limited Flash/EEPROM with finite erase cycles.

    👉 It features infinite-grade read/write endurance, zero write delay, 151-year data storage, ideal for industrial control, data acquisition and battery-powered monitoring terminals with continuous frequent data writes.

    Core Key Features

    1. Memory Architecture & FRAM Core
    • Capacity: 1Mbit (128K × 8-bit), fully byte-addressable, no page erase required before writing
    • Industry-leading endurance: 100 trillion (10¹⁴) read/write cycles, thousands of times higher than Flash/EEPROM
    • NoDelay™ bus-speed write operation: no erase delay, instant data storage to avoid power-off data loss
    • 151-year guaranteed data retention at 65°C, far superior to standard EEPROM/Flash
    1. High-Speed SPI Serial Interface
    • Max SPI clock frequency up to 40MHz, supports SPI Mode 0 (0,0) / Mode 3 (1,1)
    • Random access time only 18ns, fast real-time sampling data storage
    • Compatible pinout and command set with standard SPI Flash/EEPROM for drop-in hardware replacement
    1. Multi-Level Write Protection
    • Hardware WP pin for full array write lock
    • Software block protection: protect 1/4, 1/2 or entire memory range
    • Write Disable instruction for temporary software lock to prevent accidental overwriting
    • Built-in factory-programmed unique 8-byte serial number + manufacturer/device ID for product traceability
    1. Low-Voltage & Ultra-Low Power
    • Wide supply voltage range: 2.0V ~ 3.6V, matches 3.3V industrial and 2.4V battery-powered systems
    • Power consumption metrics:
      • Active operating current: 300μA @ 1MHz
      • Standby current: 90μA typical
      • Sleep mode leakage: only 5μA, extends battery service life for field sensors
    1. Packaging & Environmental Specs
    • Package: 8-pin narrow SOIC-8 surface mount; suffix -TR stands for tape-and-reel bulk packaging
    • Industrial wide temperature grade: -40°C ~ +85°C operating temperature
    • RoHS lead-free compliant, MSL3 moisture sensitivity rating, suitable for automated SMT mass production

    Typische Anwendungen

    Industrial PLC, servo drive and frequency converter parameter storage

    Multi-channel sensor data loggers, vibration monitoring and environmental data acquisition terminals

    Uninterruptible power supply (UPS) fault record and operation log storage

    Smart meters, energy monitoring equipment real-time power data backup

    Domestic robots, AGV mobile robot motion state & position storage

    Automotive auxiliary control unit secondary data nonvolatile storage

    Portable test & measurement instruments crash-safe measurement record

    Medical portable diagnostic equipment critical patient parameter storage

    Smart POS, self-service kiosk transaction log and configuration storage

    Remote wireless IoT field sensor long-cycle frequent data recording

    LXB Semicon supplies original Infineon FM25V10-G-TR SPI FRAM memory IC