Specifications
Manufacturer: STMicroelectronics
Device Type: N-channel low voltage power MOSFET adopting STripFET II process, through-hole IPAK package
Core Electrical Parameters
- Drain-source rated voltage: 60 V
- Continuous drain current (25°C): 12 A
- Continuous drain current (100°C): 8.5 A
- Peak pulsed drain current: 48 A
- Max on-resistance: 100 mΩ @ Vgs=10V, Id=6A
- Typical on-resistance: 80 mΩ
- Max gate-source voltage: ±16 V
- Max gate charge: 10 nC
- Total power dissipation: 30 W
- Operating junction temperature range: -55 ℃ ~ 175 ℃
- Package: IPAK (TO-251AA through-hole package)
Key Features
- Ultra-low gate charge, suitable for high-frequency switching circuits
- Excellent dv/dt resistance, strong anti-interference capability
- Built-in body freewheeling diode
- Complete avalanche energy testing, high operational reliability
- Compatible with both 5V and 10V gate driving voltage
Typical Applications
Low voltage DC-DC converters
Small DC brushless motor drive circuits
Automotive interior electrical control modules
Industrial low-voltage switching power supplies
LED constant current drive power supplies
Battery charging and management circuits
