SAMSUNG Memory & Semiconductor Solutions

Professional sourcing of industrial- and consumer-grade SAMSUNG memory, storage, and semiconductor products with guaranteed quality and long-term supply reliability.

 

Mfr Part Datasheet Manufacturer Memory/Type Capacity / Density Interface / Bus Technology Voltage (Typical) Speed / Data Rate Package Operating Temp. Notes
Samsung K4UBE3D4AB‑MGCL SAMSUNG LPDDR4X SDRAM 32 Gb (≈4 GB) Parallel DRAM LPDDR4X 1.8 / 1.1 / 0.6 V Up to ~4266 Mbps FBGA-200 −25 °C ~ +85 °C Low-power mobile DRAM, dual channel support
Samsung KLMBG2JETD‑B041 SAMSUNG eMMC Flash 32 GB eMMC 5.1 MLC NAND 1.8 V / 3.3 V HS400 Interface BGA-153 −25 °C ~ +85 °C Managed flash storage, mass production
Samsung KLMAG1JETD‑B041 SAMSUNG eMMC Flash 16 GB eMMC 5.1 MLC NAND 1.8 V / 3.3 V HS400 BGA-153 −25 °C ~ +85 °C Serial eMMC memory device
Samsung KLM8G1WEPD‑B031 SAMSUNG eMMC Flash 8 GB eMMC (likely 5.0) NAND 1.8 V / 3.3 V HS400 BGA −25 °C ~ +85 °C eMMC flash (EOL spec inferred)
Samsung KLM4G1FEPD‑B031 SAMSUNG eMMC Flash 4 GB eMMC (likely 5.0) NAND 1.8 V / 3.3 V HS400 BGA −25 °C ~ +85 °C Typical embedded flash
K9F2G08U0B‑PCB0 SAMSUNG NAND Flash 2 Gb (≈256 MB) Parallel NAND NAND – – TSOP – Legacy parallel NAND flash
Samsung K4B4G1646E-BYMA SAMSUNG DDR3L SDRAM 4 Gb (≈512 MB) Parallel DRAM DDR3L 1.35 V up to 933 MHz FBGA-96 0 °C ~ +85 °C Low-power DDR3 for embedded systems
Samsung KLMAG1JETD-B041 SAMSUNG eMMC Flash 16 GB eMMC 5.1 MLC NAND 1.8 / 3.3 V HS400 BGA-153 −25 °C ~ +85 °C Duplicate row of above (same specs)