Teknik Özellikler
This is a dual N-channel trench power MOSFET integrated chip manufactured by Vishay Siliconix, integrating two independent N-type power field effect tubes inside a single package, featuring low on-resistance and excellent heat dissipation performance for high-efficiency switching power conversion and load driving circuits.
Part Number Definition
SI7252DP stands for dual-channel N-channel MOSFET core model with PowerPAK SO-8 packaging. T1 means tape-and-reel packaging for automatic SMT production feeding. GE3 represents lead-free environmental compliant version with standard industrial specification.
Core Electrical Specifications
The device contains two completely separate N-channel MOSFET units, each with drain-source withstand voltage up to 100V. Single tube continuous drain current reaches 36.7A, peak surge current 80A. Under gate drive voltage 10V and 15A operating current condition, maximum on-resistance is 18mΩ, effectively reducing conduction loss and heating during long-time operation. Total gate charge is 27nC, input capacitance 1170pF, supporting fast switching frequency up to several hundred kilohertz without obvious switching loss. Gate-source voltage tolerance range is ±20V, threshold voltage maximum 3.5V, compatible with conventional digital logic and PWM drive signals. Single chip maximum power dissipation is 46W, junction temperature operating range from minus 55℃ to 150℃, built-in avalanche energy resistance structure to improve circuit anti-surge ability.
Packaging and Assembly Requirements
Adopts PowerPAK SO-8 leadless exposed pad surface mount package, the large bottom copper pad provides excellent thermal conduction path to lower junction temperature rise during high-power working state. It belongs to MSL3 moisture sensitive device, reflow soldering procedures must be finished within 168 hours after opening original vacuum packaging. Standard reel packaging is used to match automatic placement equipment on production lines.
Environmental and Compliance Standards
Product adopts lead-free and halogen-free production process, meeting mainstream international environmental protection restriction standards. Compact dual-tube integrated packaging simplifies PCB layout, reduces the number of peripheral devices and layout parasitic inductance compared with using two discrete MOSFETs separately, which helps improve power supply stability and conversion efficiency.
Tipik Uygulama Alanları
Multi-phase buck power supply modules on server mainboards and industrial control motherboards DC-DC synchronous rectification circuits of communication equipment power modules and network switch power boards High current load switch and battery discharge protection circuit for energy storage equipment Small inverter circuit and low-power motor drive control unit Industrial switching power supply primary side switching tube and high voltage step-down conversion circuit
LXB Semicon supplies original Vishay SI7252DP-T1-GE3 dual N-channel power MOSFET
