Especificaciones
FDT434P is a P-channel enhancement-mode PowerTrench MOSFET developed by onsemi. This component is marked obsolete and no longer recommended for new designs.
Suffix Explanation
FDT434P is the complete ordering part number. Standard factory packaging is tape-and-reel for automated SMT assembly.
1. Absolute Maximum Ratings
- Drain-source voltage (VDS): -20 V
- Gate-source voltage (VGS): ±8 V
- Continuous drain current (ID) at 25°C ambient temperature: -6 A
- Maximum power dissipation at ambient temperature: 3 W
- Junction and storage temperature range: -55 ℃ ~ +150 ℃
- Avalanche energy tolerance is verified via full avalanche testing
2. Key Electrical Characteristics
- Maximum drain-source on resistance: 50 mΩ at VGS = -4.5 V, ID = -6 A; 70 mΩ at VGS = -2.5 V
- Typical gate charge: 13 nC, maximum gate charge 19 nC
- Maximum gate-source threshold voltage: 1 V under 250 μA test current
- Maximum input capacitance: 1187 pF at VDS = 10 V
- Built-in soft-recovery body diode, which reduces voltage spikes and eliminates extra snubber circuits in synchronous rectification circuits
- Optimized to balance low conduction loss and fast switching speed
3. Package & Mechanical Specifications
- Package type: SOT-223 surface mount package with 4 pins and extended drain tab
- Compact outline for dense PCB layout, the exposed tab improves heat dissipation during continuous high-current operation
- Moisture Sensitivity Level: MSL 1, no mandatory time restriction for reflow soldering after package opening
4. Compliance and Environmental Standards
- Fully lead-free and RoHS compliant, meeting REACH regulatory requirements
- Designed for stable operation in consumer electronics and industrial low-voltage power switching circuits
5. Typical Application Fields
Load switch and power gating circuits for portable electronic devices Synchronous rectification loops inside DC-DC converters and LDO linear regulators Low-power small motor drive and relay control circuits Battery management power path switching for handheld instruments and IoT terminals Auxiliary power domain enable control on embedded system mainboards
LXB Semicon supplies original onsemi FDT434P 20V 6A SOT-223 P-channel power MOSFET
