SAMSUNG Memory & Semiconductor Solutions
Professional sourcing of industrial- and consumer-grade SAMSUNG memory, storage, and semiconductor products with guaranteed quality and long-term supply reliability.
| wdt_ID | wdt_created_by | wdt_created_at | wdt_last_edited_by | wdt_last_edited_at | Mfr Part | Datasheet | Manufacturer | Memory/Type | Capacity / Density | Interface / Bus | Technology | Voltage (Typical) | Speed / Data Rate | Package | Operating Temp. | Notes |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 882 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | Samsung K4UBE3D4AB‑MGCL | SAMSUNG | LPDDR4X SDRAM | 32 Gb (≈4 GB) | Parallel DRAM | LPDDR4X | 1.8 / 1.1 / 0.6 V | Up to ~4266 Mbps | FBGA-200 | −25 °C ~ +85 °C | Low-power mobile DRAM, dual channel support | |
| 883 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | Samsung KLMBG2JETD‑B041 | SAMSUNG | eMMC Flash | 32 GB | eMMC 5.1 | MLC NAND | 1.8 V / 3.3 V | HS400 Interface | BGA-153 | −25 °C ~ +85 °C | Managed flash storage, mass production | |
| 884 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | Samsung KLMAG1JETD‑B041 | SAMSUNG | eMMC Flash | 16 GB | eMMC 5.1 | MLC NAND | 1.8 V / 3.3 V | HS400 | BGA-153 | −25 °C ~ +85 °C | Serial eMMC memory device | |
| 885 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | Samsung KLM8G1WEPD‑B031 | SAMSUNG | eMMC Flash | 8 GB | eMMC (likely 5.0) | NAND | 1.8 V / 3.3 V | HS400 | BGA | −25 °C ~ +85 °C | eMMC flash (EOL spec inferred) | |
| 886 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | Samsung KLM4G1FEPD‑B031 | SAMSUNG | eMMC Flash | 4 GB | eMMC (likely 5.0) | NAND | 1.8 V / 3.3 V | HS400 | BGA | −25 °C ~ +85 °C | Typical embedded flash | |
| 887 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | K9F2G08U0B‑PCB0 | SAMSUNG | NAND Flash | 2 Gb (≈256 MB) | Parallel NAND | NAND | – | – | TSOP | – | Legacy parallel NAND flash | |
| 888 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | Samsung K4B4G1646E-BYMA | SAMSUNG | DDR3L SDRAM | 4 Gb (≈512 MB) | Parallel DRAM | DDR3L | 1.35 V | up to 933 MHz | FBGA-96 | 0 °C ~ +85 °C | Low-power DDR3 for embedded systems | |
| 889 | admin | 17/01/2026 02:10 PM | admin | 17/01/2026 02:10 PM | Samsung KLMAG1JETD-B041 | SAMSUNG | eMMC Flash | 16 GB | eMMC 5.1 | MLC NAND | 1.8 / 3.3 V | HS400 | BGA-153 | −25 °C ~ +85 °C | Duplicate row of above (same specs) | |
| Datasheet | Manufacturer | Memory/Type | Capacity / Density | Interface / Bus | Technology | Voltage (Typical) | Speed / Data Rate | Package | Operating Temp. | Notes |