Teknik Özellikler
Üretici: STMicroelectronics
Device Type: N-channel silicon carbide power MOSFET adopting second-generation SiC process technology, through-hole 4-pin HiP247-4 package
Temel Elektriksel Özellikler
Drain-source rated breakdown voltage: 1200V
Maximum continuous drain current: 91A
Typical drain-source on-resistance: 21mΩ, maximum 30mΩ under standard driving conditions
Total power dissipation rating: 547W
Gate threshold voltage range: 1.9V ~ 2.45V
Total gate charge is kept at a low level for fast switching actions
Input, output and reverse transfer capacitance values are optimized to minimize switching loss
Maximum allowable junction temperature: 200°C
Operating temperature range: -55°C ~ 200°C
Package form: HiP247-4 long lead through-hole encapsulation with extra source sense pin
Temel Özellikler
Stable switching loss performance barely affected by junction temperature rise, maintaining consistent efficiency under high-temperature continuous operation
Built-in high-performance intrinsic body diode with ultra-low reverse recovery loss
Extremely low gate charge and parasitic capacitance support high-frequency switching design
Auxiliary source sensing pin enables precise current sampling and gate drive control to further lift system efficiency
Low on-resistance per chip area reduces conduction heat generation
Wide safe operating temperature range simplifies overall system thermal layout design
Minimal leakage current under blocking voltage conditions
Full compatibility with standard SiC gate drive voltage schemes
Halogen-free molding material conforms to global environmental requirements
Tipik Uygulama Senaryoları
On-board vehicle traction inverters and on-board charging power converters
Industrial high-power three-phase motor drive inverters
High-power solar photovoltaic grid-tied inverters
Energy storage bidirectional power conversion systems
High voltage industrial UPS uninterruptible power supplies
High efficiency fast charging station power modules
