Технические характеристики
Производитель: STMicroelectronics
Device Type: N-channel power MOSFET, automotive grade
Core Parameters
- Drain-source voltage: 40V
- Continuous drain current: 80A
- Max on-resistance: 6mΩ
- Max power dissipation: 110W
- Package: DPAK (TO-252)
- Operating junction temperature: -55℃ ~ +175℃
- Tape & reel packaging for automated mounting
Main Features
Adopts STripFET III process, ultra-low conduction loss
Logic-level gate drive compatible
Low gate charge for high-speed switching
100% avalanche endurance tested
Built-in body diode, good heat dissipation
Типовые применения
Automotive power supply modules, high-current DC-DC converters, battery management systems, small motor drive circuits, industrial low-voltage switching power supplies
