Spesifikasi
K4B4G1646E-BYMA is a DDR3L low-voltage synchronous dynamic random access memory chip produced by Samsung Semiconductor, designed for embedded main control, video encoding equipment and consumer intelligent hardware to provide stable system running memory with low power consumption and high transmission bandwidth.
Part Number Definition
K4 represents Samsung DRAM series product code. B stands for DDR3 generation memory architecture. 4G refers to total storage density of 4Gb. 16 means 16-bit data bit width. 46E is die revision and power consumption configuration version. BYMA defines 1866MT/s data rate, commercial temperature specification and standard FBGA packaging form. Factory default adopts tape-and-reel packaging to support automatic PCB SMT mounting.
Core Memory Architecture & Performance Parameters
Total storage capacity is 4Gb, organized as 256M words × 16-bit with 8 independent internal Bank groups, adopting 8-bit prefetch DDR3 transmission mechanism. The peak data transfer rate reaches 1866 MT/s per pin, with reference clock frequency at 933MHz. It supports programmable CAS write latency, burst length of 4 and 8, differential bidirectional DQS data strobe signal to enhance signal anti-interference ability during high-speed transmission. Built-in ZQ pin automatic impedance calibration and on-die termination ODT function reduce signal reflection and improve transmission integrity. The standard refresh cycle is 7.8μs under normal operating temperature to guarantee data retention accuracy.
Power Supply & Low Power Design
It supports dual voltage working mode, native DDR3L 1.35V main power supply and I/O voltage, which cuts power consumption by around 20% compared with standard 1.5V DDR3 specification, and is fully backward compatible with 1.5V power rail circuits. Multiple power saving modes including self-refresh, power-down and deep power-down are integrated to greatly lower power consumption when the chip is not frequently accessed, well adapting to battery-powered portable devices.
Package and Mechanical Specifications
Package type is 96-ball FBGA fine pitch ball grid array package, with overall dimension 13.3mm × 7.5mm. Moisture Sensitivity Level is MSL 3, and reflow soldering must be completed within 168 hours after opening vacuum moisture-proof packaging. Standard lead-free and halogen-free process is adopted with stable solderability suitable for mass batch production.
Environmental and Compliance Standards
Commercial grade operating temperature range is 0℃ to +85℃, applicable to conventional indoor embedded and consumer electronic equipment. The chip complies with RoHS and REACH environmental protection regulations without restricted hazardous substances. Optimized layout and EMC design restrain electromagnetic interference, ensuring stable operation under complex circuit working conditions.
Bidang Aplikasi Umum
IP cameras, NVR video recording hosts and HiSilicon series video encoding mainboard running memory Android set-top boxes, smart TV main control boards and network multimedia player system memory Industrial touch panels, embedded development boards and small PLC control unit cache memory Tablet devices, portable handheld terminals and low-power IoT gateway main memory Vehicle-mounted multimedia host, access control main controllers and POS terminal data buffer memory
LXB Semicon supplies original Samsung K4B4G1646E-BYMA DDR3L SDRAM memory IC
