Thông số kỹ thuật
Nhà sản xuất: STMicroelectronics
Device Type: N-channel silicon carbide power MOSFET built with third-generation SiC technology, surface mount package
Các thông số điện chính
Drain-source withstand voltage: 1200 V
Continuous drain current rating: 47 A
Maximum drain-source on-resistance: 25 mΩ
Maximum power dissipation: 310 W
Gate threshold voltage: 2.0 V typical
Low total gate charge to support high-speed switching
Optimized parasitic capacitances to cut switching losses
Maximum junction temperature: 175 ℃
Operating temperature range: -55 ℃ to 175 ℃
Package outline: TO-247-3 surface mount variant
Các tính năng chính
Third-generation silicon carbide structure brings lower conduction loss and improved high-temperature stability
Intrinsic body diode with negligible reverse recovery charge, ideal for hard switching circuits
Consistent on-resistance and switching characteristics across wide temperature span
Low parasitic inductance inside the package to restrain voltage spikes during switching
Simple gate drive requirements, compatible with conventional isolated power driver circuits
Excellent avalanche ruggedness to cope with transient voltage surges
Compact surface mount design facilitates thermal layout on PCB boards
Halogen-free packaging materials meet environmental standards
Ứng dụng điển hình
Solar grid-connected inverters
Energy storage bidirectional converters
Industrial high voltage power supplies
Electric vehicle on-board chargers
Fast DC charging pile power stages
High efficiency uninterruptible power systems
