STGAP2SICSNCTR

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    المواصفات

    الشركة المصنعة: STMicroelectronics

    Device Type: Isolated single-channel SiC MOSFET gate driver

    Suffix CTR means tape & reel packaging for automated SMT assembly

    Core Parameters

    Peak sourcing/sinking drive current: 4A

    RMS isolation voltage: 3500V

    CMTI noise immunity: ±100V/ns

    Typical propagation delay: 75ns

    Operating temperature: -40℃ ~ 125℃

    Package: Narrow SOIC8

    Main Features

    Built-in Miller clamp to suppress gate voltage oscillation

    SiC-tailored undervoltage lockout, thermal shutdown protection

    Dual input pins with hardware interlock to avoid shoot-through

    Supports positive and negative gate bias driving

    Standby mode for low idle power consumption

    Compatible with 3.3V/5V logic input levels

    التطبيقات النموذجية

    New energy vehicle on-board chargers, industrial motor inverters, UPS power supplies, high-frequency DC-DC converters, induction heating equipment, power factor correction modules